Tunable bandgap and spin-orbit coupling by composition control of MoS2 and MoOx (x = 2 and 3) thin film compounds

Award’s of the best poster at 13th conference of condense mater physics
February 3, 2017
Current-driven second-harmonic domain wall resonance in ferromagnetic metal/nonmagnetic metal bilayers: A field-free method for spin Hall angle measurements
October 7, 2017
Show all

Tunable bandgap and spin-orbit coupling by composition control of MoS2 and MoOx (x = 2 and 3) thin film compounds

Abstract

We report on the MoS2 and MoOx (x = 2 and 3) composite thin layers, electrodeposited, onto a Florine doped Tin Oxide (FTO) substrate. Our results show a change in relative content of these compounds in different thicknesses ranging from ∼20 to 540 nm. This change in the relative content at different thicknesses leads to a change in optical and electrical properties including bandgap and the type of semiconductivity. A sharp transition from p to n-type of semiconductivity is observed by scanning tunneling spectroscopy measurements. We find that the spin-orbit interaction of Mo 3d electrons in the MoS2 and MoO3 enhances by significant reduction of the MoO3 content in thicker layers.

3 Comments

  1. At low electric fields, the interplay between this tunable band gap, which is specific to electrons on a honeycomb lattice, and the Kane-Mele spin-orbit coupling induces a transition from a topological to a band insulator, whereas at much higher electric fields silicene becomes a semimetal.

  2. sdnakes says:

    It was observed that the relative content has systematic electrical and optical changes for different thicknesses of layers ranging from $\approx$20 to 540 nm. Optical and electrical bandgaps reveals a tuneable behavior by controlling the relative content of compounds as well as a sharp transition from p to n-type of semiconductivity.

  3. This change in the relative content at different thicknesses leads to a change in optical and electrical properties including bandgap and the type of semiconductivity.

Leave a Reply

Your email address will not be published. Required fields are marked *